TLP250 "Power MOSFET & IGBT Gate Drive"

The TOSHIBA TLP250 consists of a GaAlAs light emitting diode and a integrated photodetector. 

This unit is 8−lead DIP package. 

TLP250 is suitable for gate driving circuit of IGBT or power MOS FET. 

• Input threshold current: IF=5mA(max.) 

• Supply current (ICC): 11mA(max.) 

• Supply voltage (VCC): 10−35V 

• Output current (IO): ±1.5A (max.) 

• Switching time (tpLH/tpHL): 1.5µs(max.) 

• Isolation voltage: 2500Vrms(min.)